| Publication Type |
Journal Article |
| Title |
Electronic structure of iridium oxide films formed in neutral phosphate buffer solution |
| Authors |
T. M. Silva AMP Simoes MGS Ferreira M Walls MD Belo |
| Groups |
|
| Journal |
JOURNAL OF ELECTROANALYTICAL CHEMISTRY |
| Year |
1998 |
| Month |
January |
| Volume |
441 |
| Number |
1 |
| Pages |
5-12 |
| Abstract |
Iridium oxide films were formed by potential cycling in neutral phosphate buffer solution (pH = 6.9) and studied by capacitance and photoelectrochemical measurements, and by TEM. The results have revealed p-type semiconductivity of the oxide. The increase of the electric conductivity occurring simultaneously with the colouring of the film is explained by a transition, at the film\electrolyte interface, from a Schottky barrier to an ohmic contact. This transition takes place at the flatband potential; which is close to the potential of the main voltammetric peak. The doping values obtained from the Mott-Schottky approach are related with the porous structure of the film. (C) 1998 Elsevier Science S.A. |
| DOI |
http://dx.doi.org/10.1016/S0022-0728(97)00300-8 |
| ISBN |
|
| Publisher |
|
| Book Title |
|
| ISSN |
1572-6657 |
| EISSN |
|
| Conference Name |
|
| Bibtex ID |
ISI:000072658500002 |
| Observations |
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