Publication Type Journal Article
Title The use of bismuth(III) dithiocarbamato complexes as precursors for the low-pressure MOCVD of Bi2S3
Authors O. Monteiro T Trindade JH Park P O Brien
Groups
Journal CHEMICAL VAPOR DEPOSITION
Year 2000
Month October
Volume 6
Number 5
Pages 230+
Abstract The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrays has attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)(3) and Bi(S(2)CNMe(n)Hex)(3) produces strongly adhered polycrystalline films on glass substrates at 400-450 degrees C. XPS and EDX analyses confirm that the deposited film surface is predominantly Bi2S3 and no elemental contamination is detected.
DOI http://dx.doi.org/10.1002/1521-3862(200010)6:5<230::AID-CVDE230>3.0.CO;2-P
ISBN
Publisher
Book Title
ISSN 0948-1907
EISSN
Conference Name
Bibtex ID ISI:000089889400008
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