Publication Type |
Journal Article |
Title |
The use of bismuth(III) dithiocarbamato complexes as precursors for the low-pressure MOCVD of Bi2S3 |
Authors |
O. Monteiro T Trindade JH Park P O Brien |
Groups |
|
Journal |
CHEMICAL VAPOR DEPOSITION |
Year |
2000 |
Month |
October |
Volume |
6 |
Number |
5 |
Pages |
230+ |
Abstract |
The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrays has attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)(3) and Bi(S(2)CNMe(n)Hex)(3) produces strongly adhered polycrystalline films on glass substrates at 400-450 degrees C. XPS and EDX analyses confirm that the deposited film surface is predominantly Bi2S3 and no elemental contamination is detected. |
DOI |
http://dx.doi.org/10.1002/1521-3862(200010)6:5<230::AID-CVDE230>3.0.CO;2-P |
ISBN |
|
Publisher |
|
Book Title |
|
ISSN |
0948-1907 |
EISSN |
|
Conference Name |
|
Bibtex ID |
ISI:000089889400008 |
Observations |
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